Simulation studies of bulk GaAs switch photoconductivity using a picosecond laser pulse

Author

Thomas, L.M. ; Lakdawala, V.K. ; Schoenbach, K.H.

Author_Institution

Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA

fYear

1991

fDate

7-10 Apr 1991

Firstpage

771

Abstract

The characteristics of a bulk, optically controlled, GaAs switch was studied by means of a rate-equation model. The modeling was performed for copper-compensated silicon-doped semi-insulating GaAs (GaAs:Si:Cu) as switch material. A picosecond laser pulse (λ=1.054 μm, full-width, half-maximum=300 ps) was assumed to turn the switch on. The effect of different parameters, such as concentrations of various deep centers and the laser pulse energy, on switch characteristics has been studied. Simulation results show that the switch performance has a strong dependence on the partition (N _CuA/N_CuB)

Keywords

gallium arsenide; laser beam applications; photoconducting devices; semiconductor switches; 1.054 micron; GaAs:Si,Cu; deep centers; laser pulse energy; partition; picosecond laser pulse; rate-equation model; switch characteristics; switch material; switch performance; Absorption; Copper; Free electron lasers; Gallium arsenide; Laser modes; Optical control; Optical pulses; Optical switches; Photoconductivity; Photonic band gap;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '91., IEEE Proceedings of

Conference_Location

Williamsburg, VA

Print_ISBN

0-7803-0033-5

Type

conf

DOI

10.1109/SECON.1991.147863

Filename

147863