Title :
Ultrafast exciton trapping in Te-barrier-doped ZnSe:Te/(CdSe)/sub m/(ZnSe)/sub n/ short period superlattice quantum wells
Author :
Weizhu Lin ; Wenji Pen ; Geng Xu ; Zhongling Pen ; Shixin Yuan
Author_Institution :
Zhongshan Univ., Guangzhou, China
Abstract :
Summary form only given. In this paper we report studies on the ultrafast dynamics of exciton trapping in ZnSe:Te barrier doped period superlattice quantum well (BDSPSQW). The transient luminescence spectra of the samples at indirect excitation and 80 K show a rapid exciton trapping process.
Keywords :
II-VI semiconductors; excitons; high-speed optical techniques; photoluminescence; semiconductor doping; semiconductor quantum wells; semiconductor superlattices; tellurium; zinc compounds; 80 K; CdSe; Te-barrier-doped; ZnSe:Te; ZnSe:Te barrier doped period superlattice quantum well; ZnSe:Te/(CdSe)/sub m/(ZnSe)/sub n/ short period superlattice quantum wells; exciton trapping; indirect excitation; rapid exciton trapping process; transient luminescence spectra; ultrafast dynamics; ultrafast exciton trapping; Atomic beams; Atomic layer deposition; Atomic measurements; Excitons; Luminescence; Optical pulses; Superlattices; Tellurium; Vibration measurement; Zinc compounds;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
