Ultrafast exciton trapping in Te-barrier-doped ZnSe:Te/(CdSe)/sub m/(ZnSe)/sub n/ short period superlattice quantum wells

Author

Weizhu Lin ; Wenji Pen ; Geng Xu ; Zhongling Pen ; Shixin Yuan

Author_Institution

Zhongshan Univ., Guangzhou, China

fYear

1996

fDate

7-7 June 1996

Firstpage

53

Lastpage

54

Abstract

Summary form only given. In this paper we report studies on the ultrafast dynamics of exciton trapping in ZnSe:Te barrier doped period superlattice quantum well (BDSPSQW). The transient luminescence spectra of the samples at indirect excitation and 80 K show a rapid exciton trapping process.

Keywords

II-VI semiconductors; excitons; high-speed optical techniques; photoluminescence; semiconductor doping; semiconductor quantum wells; semiconductor superlattices; tellurium; zinc compounds; 80 K; CdSe; Te-barrier-doped; ZnSe:Te; ZnSe:Te barrier doped period superlattice quantum well; ZnSe:Te/(CdSe)/sub m/(ZnSe)/sub n/ short period superlattice quantum wells; exciton trapping; indirect excitation; rapid exciton trapping process; transient luminescence spectra; ultrafast dynamics; ultrafast exciton trapping; Atomic beams; Atomic layer deposition; Atomic measurements; Excitons; Luminescence; Optical pulses; Superlattices; Tellurium; Vibration measurement; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865562