Measurement of minority-carrier lifetime and surface recombination velocity with a high spacial resolution

Quantitative analysis of the electron beam induced current makes it possible to evaluate the minority carrier lifetime three dimensionally in the bulk and the surface recombination velocity two dimensionally, with a high spacial resolution. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of phosphorus-diffused diodes is presented as well as a three dimensional mapping of minority carrier lifetime in ion implanted silicon.