DocumentCode :
3554138
Title :
Characterization of silicon MOS tunnel diodes
Author :
Kar, S.
Author_Institution :
Indian Institute of Technology, Kanpur, India
Volume :
22
fYear :
1976
fDate :
1976
Firstpage :
79
Lastpage :
83
Keywords :
Capacitance measurement; Capacitance-voltage characteristics; Charge carrier lifetime; Current measurement; Density measurement; Energy measurement; Photovoltaic cells; Schottky diodes; Silicon; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Type :
conf
DOI :
10.1109/IEDM.1976.188990
Filename :
1478702
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3554138
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