An improved circuit model of the step-recovery diode for computer-aided design

The switching behavior of pin diodes with short i-layer, used as step-recovery diodes, is discussed on the basis of measurements in the subnanosecond time domain. Special attention is given to the effect of charge storage in the contact layers on the turn-off transition response. It is demonstrated that this additional storage effect is a dominant factor as far as high injection levels are concerned. A large-signal circuit model is presented which is suited for computer-aided circuit design using transient network analysis programs. In contrast to existing circuit models, this model includes all effects responsible for the various phases of the turn-off response observed.