• DocumentCode
    3554159
  • Title

    The effects of emitter impurity concentration on the high-current gain of silicon NPN power transistors

  • Author

    Martinelli, Ramon U. ; Jetter, E. ; Jetter, Evelyn

  • Author_Institution
    RCA Laboratories, Princeton, New Jersey
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    162
  • Lastpage
    165
  • Abstract
    A reduction of the surface impurity concentration in the emitter from levels beyond 5 × 1020to levels around 5 × 1019cm-3is known to increase the emitter efficiency, and hence, the d.c. gain of bi-polar transistors at low current levels
  • Keywords
    Current density; Cutoff frequency; Fingers; Impurities; Laboratories; Power transistors; Silicon; Solid state circuits; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189009
  • Filename
    1478721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554159