• DocumentCode
    3554161
  • Title

    Operation and characterization of N-channel EPROM cells

  • Author

    Barnes, J. ; Linden, J. ; Edwards, J.

  • Author_Institution
    American Micro-Systems, Inc., Santa Clara, California
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    This paper describes the operation and characterization of an N-channel, double-polysilicon gate MOS structure used in an electrically programmable read-only memory (EPROM). The tradeoffs for various structures with regard to writing ability, reading ability, fabrication complexity and ease of erasure are discussed. Measurements of the device are compared to the associated theory, and the sensitivity of the structure to various device parameters is described.
  • Keywords
    Doping; EPROM; Fabrication; Performance evaluation; Product development; Pulse measurements; Size control; Testing; Threshold voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189011
  • Filename
    1478723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554161