DocumentCode
3554192
Title
Investigation of the sapphire-silicon interface by transient current analysis
Author
Lehovec, K. ; Miller, Richard
Author_Institution
University of Southern California, Los Angeles, California
Volume
22
fYear
1976
fDate
1976
Firstpage
283
Lastpage
286
Abstract
Transient currents caused by an abrupt switch of the bias voltage applied to an MOS-capacitor on sapphire substrate are measured and analysed to obtain information on the Shockley-Read-Hall centers involved in the inversion charge build-up.
Keywords
Charge carrier processes; Electrons; Entropy; Semiconductor films; Silicon; Steady-state; Substrates; Switches; Transient analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Type
conf
DOI
10.1109/IEDM.1976.189039
Filename
1478751
Link To Document