• DocumentCode
    3554195
  • Title

    Physics of and models for I2L

  • Author

    Klaassen, F.M.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, Netherlands
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    299
  • Lastpage
    303
  • Abstract
    Device physics for modelling an I2L gate is discussed. The closest possible relation of the device properties to technology, design and measuring practice has been sought. A standard I2L gate and other versions like oxide-isolated I2L, SFL and Schottky-I2L are considered.
  • Keywords
    Cutoff frequency; Electrons; Integrated circuit modeling; Inverters; Laboratories; Merging; Physics; Semiconductor process modeling; Spontaneous emission; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189042
  • Filename
    1478754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554195