DocumentCode :
3554195
Title :
Physics of and models for I2L
Author :
Klaassen, F.M.
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Volume :
22
fYear :
1976
fDate :
1976
Firstpage :
299
Lastpage :
303
Abstract :
Device physics for modelling an I2L gate is discussed. The closest possible relation of the device properties to technology, design and measuring practice has been sought. A standard I2L gate and other versions like oxide-isolated I2L, SFL and Schottky-I2L are considered.
Keywords :
Cutoff frequency; Electrons; Integrated circuit modeling; Inverters; Laboratories; Merging; Physics; Semiconductor process modeling; Spontaneous emission; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Type :
conf
DOI :
10.1109/IEDM.1976.189042
Filename :
1478754
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3554195
بازگشت