• DocumentCode
    3554196
  • Title

    The Schottky I2L technology and its application in a 24 × 9 sequential access memory

  • Author

    Hewlett, F.W., Jr. ; Ryden, W.D.

  • Author_Institution
    Texas Instruments Inc., Dallas, Texas
  • fYear
    1976
  • fDate
    6-8 Dec. 1976
  • Firstpage
    304
  • Lastpage
    307
  • Abstract
    The Schottky I2L device and a two level metal scheme have been used to fabricate a 24×9 sequential access memory. The T2L compatible chip has 1287 Schottky I2L gates, operates at 60mA, and requires an area of 13,200 mil2. Details of the Schottky I2L technology and its application in a 24×9 sequential access memory will be discussed.
  • Keywords
    Boron; Conductivity; Integrated circuit interconnections; Laboratories; Large scale integration; Schottky diodes; Silicon; Telephony; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Conference_Location
    Washigton, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189043
  • Filename
    1478755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554196