• DocumentCode
    3554204
  • Title

    CMOS process for high-performance analog LSI

  • Author

    Black, W.C., Jr. ; McCharles, R.H. ; Hodges, D.A.

  • Author_Institution
    University of California, Berkeley, California
  • Volume
    22
  • fYear
    1976
  • fDate
    1976
  • Firstpage
    331
  • Lastpage
    334
  • Abstract
    A new CMOS process has been developed for application in A/D converters, and other analog and analog-digital LSI circuits. High voltage CMOS, isolated vertical NPN transistors, Schottky-barrier diodes and high performance N channel BBD type charge transfer devices may all be realized with the standard six mask process. Two amplifiers have been fabricated, one is designed completely with CMOS and features high gain, while the other uses both CMOS and bipolar devices to achieve moderate gain and fast settling time.
  • Keywords
    Boron; CMOS process; CMOS technology; Circuits; Fabrication; Implants; Large scale integration; MOS devices; Schottky diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1976 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1976.189050
  • Filename
    1478762