DocumentCode :
3554204
Title :
CMOS process for high-performance analog LSI
Author :
Black, W.C., Jr. ; McCharles, R.H. ; Hodges, D.A.
Author_Institution :
University of California, Berkeley, California
Volume :
22
fYear :
1976
fDate :
1976
Firstpage :
331
Lastpage :
334
Abstract :
A new CMOS process has been developed for application in A/D converters, and other analog and analog-digital LSI circuits. High voltage CMOS, isolated vertical NPN transistors, Schottky-barrier diodes and high performance N channel BBD type charge transfer devices may all be realized with the standard six mask process. Two amplifiers have been fabricated, one is designed completely with CMOS and features high gain, while the other uses both CMOS and bipolar devices to achieve moderate gain and fast settling time.
Keywords :
Boron; CMOS process; CMOS technology; Circuits; Fabrication; Implants; Large scale integration; MOS devices; Schottky diodes; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Type :
conf
DOI :
10.1109/IEDM.1976.189050
Filename :
1478762
Link To Document :
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