DocumentCode
3554204
Title
CMOS process for high-performance analog LSI
Author
Black, W.C., Jr. ; McCharles, R.H. ; Hodges, D.A.
Author_Institution
University of California, Berkeley, California
Volume
22
fYear
1976
fDate
1976
Firstpage
331
Lastpage
334
Abstract
A new CMOS process has been developed for application in A/D converters, and other analog and analog-digital LSI circuits. High voltage CMOS, isolated vertical NPN transistors, Schottky-barrier diodes and high performance N channel BBD type charge transfer devices may all be realized with the standard six mask process. Two amplifiers have been fabricated, one is designed completely with CMOS and features high gain, while the other uses both CMOS and bipolar devices to achieve moderate gain and fast settling time.
Keywords
Boron; CMOS process; CMOS technology; Circuits; Fabrication; Implants; Large scale integration; MOS devices; Schottky diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Type
conf
DOI
10.1109/IEDM.1976.189050
Filename
1478762
Link To Document