Title :
Surface characterization of ion-implanted Si-SiO2structures
Author :
Gray, P.V. ; Wang, K.L.
Author_Institution :
General Electric Corporate Research and Development, Schenectady, New York
Abstract :
This paper describes the results of calculations and experiments relating to silicon surface characteristics and how they are altered by implanted dopant layers. Properties considered are capacitance-voltage characteristics, doping profiling methods, MOSFET threshold and leakage values and noise levels.
Keywords :
Annealing; Capacitance-voltage characteristics; Doping; Implants; Ion implantation; Leakage current; MOSFET circuits; Poisson equations; Research and development; Voltage;
Conference_Titel :
Electron Devices Meeting, 1976 International
DOI :
10.1109/IEDM.1976.189052
