DocumentCode
3554211
Title
The effects of neutral capacitance upon the frequency response of bipolar transistors - Optimum concentration gradient
Author
Wang, A.S.
Author_Institution
Hewlett-Packard Laboratories, Palo Alto, California
fYear
1976
fDate
6-8 Dec. 1976
Firstpage
362
Lastpage
364
Abstract
This report points out the importance of the so-called "neutral capacitance" in determining the frequency response of microwave transistors. A simple model of the emitter-base junction capacitance is also presented which leads to the value of optimum concentration gradient for minimum capacitance of the forward-bias junction.
Keywords
Bipolar transistors; Capacitance; Capacitance-voltage characteristics; Cutoff frequency; Delay; Difference equations; Frequency response; Laboratories; Microwave transistors; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Conference_Location
Washigton, DC, USA
Type
conf
DOI
10.1109/IEDM.1976.189057
Filename
1478769
Link To Document