DocumentCode :
3554211
Title :
The effects of neutral capacitance upon the frequency response of bipolar transistors - Optimum concentration gradient
Author :
Wang, A.S.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, California
fYear :
1976
fDate :
6-8 Dec. 1976
Firstpage :
362
Lastpage :
364
Abstract :
This report points out the importance of the so-called "neutral capacitance" in determining the frequency response of microwave transistors. A simple model of the emitter-base junction capacitance is also presented which leads to the value of optimum concentration gradient for minimum capacitance of the forward-bias junction.
Keywords :
Bipolar transistors; Capacitance; Capacitance-voltage characteristics; Cutoff frequency; Delay; Difference equations; Frequency response; Laboratories; Microwave transistors; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1976 International
Conference_Location :
Washigton, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1976.189057
Filename :
1478769
Link To Document :
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