DocumentCode
3554227
Title
Double-mesa thin-film reach-through silicon avalanche photodiodes with large gain-bandwidth product
Author
Muller, Jörg ; Ataman, Attila
Author_Institution
Technische Universität Braunschweig, Braunschweig, W. Germany
Volume
22
fYear
1976
fDate
1976
Firstpage
416
Lastpage
419
Abstract
Design criteria for a broadband high gain-bandwidth-product silicon avalanche photodiode are given. The structure and fabrication steps of a diode are presented, which meet these criteria. It is a thin-silicon-film structure, which uses a highly reflecting back contact to increase the internal quantum efficiency. The temporal and wavelength response are given. The measurements confirm the expected excellent characteristic.
Keywords
Avalanche photodiodes; Circuit noise; Diodes; Equations; Fabrication; Geometry; Optical noise; Semiconductor thin films; Signal to noise ratio; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Type
conf
DOI
10.1109/IEDM.1976.189071
Filename
1478783
Link To Document