DocumentCode
3554228
Title
Ultrafast multireflection- and transparent thinfilm silicon photodiodes
Author
Muller, Johannes
Volume
22
fYear
1976
fDate
1976
Firstpage
420
Lastpage
423
Abstract
Thin-silicon-film mesa-shaped pin-photodiodes are presented, which exhibit high internal quantum efficiency at risetimes below 100 ps using a grated highly reflecting back contact and total reflection at the top. Theoretical and typical experimental data are given. Transparent photodiodes fabricated in a similar way are introduced, which can be inserted into an optical transmission path to take out a fraction of power without the need of an optical coupler.
Keywords
Absorption; Capacitance; Diodes; Lighting; Optical device fabrication; Optical reflection; Photodiodes; Reflectivity; Silicon; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Type
conf
DOI
10.1109/IEDM.1976.189072
Filename
1478784
Link To Document