Optical studies on high quality InGaAs/GaAs quantum dots

Author

Perner, Matthias ; Feldmann, J. ; Weber, D. ; Marschner, T. ; Stolz, Wolfgang ; Gobel, E. ; Lemmer, Uli

Author_Institution

Dept. fo Phys., Munich Univ., Germany

fYear

1996

fDate

7-7 June 1996

Firstpage

62

Abstract

Summary form only given. We have performed photoluminescence (PL) and PL excitation (PLE) experiments on strain-induced InGaAs QDs showing remarkably high optical quality. As depicted schematically InP islands have been grown on an InGaAs-GaAs single quantum well structure leading to a strain-induced lateral potential profile of considerable energetic depth in the region below the InP stressors.

Keywords

III-V semiconductors; deformation; gallium arsenide; indium compounds; island structure; semiconductor quantum dots; semiconductor thin films; InGaAs-GaAs; InGaAs-GaAs single quantum well structure; InGaAs/GaAs quantum dots; InP; InP islands; InP stressors; Optical studies; PL excitation; energetic depth; high quality; photoluminescence; strain-induced InGaAs QDs; strain-induced lateral potential profile; Absorption; Atomic force microscopy; Carrier confinement; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Physics; Quantum dots; Solids; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865574