DocumentCode
3554271
Title
Narrow channel effects in insulated gate field effect transistors
Author
Noble, W.P. ; Cottrell, P.E.
Author_Institution
IBM System Products Division, Essex Junction, Vermont
Volume
22
fYear
1976
fDate
1976
Firstpage
582
Lastpage
586
Abstract
A numerical two dimmensional simulation has been used to demonstrate the effect of IGFET channel width on threshold voltage. The computed results agree well with experiments and are used to build an understanding of the mechanism. Potential, field and carrier concentration distributions are used to provide a picture of the geometric interactions.
Keywords
Counting circuits; Electrical resistance measurement; Electrons; FETs; Finite element methods; Insulation; Intrusion detection; Large scale integration; Substrates; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Type
conf
DOI
10.1109/IEDM.1976.189112
Filename
1478824
Link To Document