Title :
Narrow channel effects in insulated gate field effect transistors
Author :
Noble, W.P. ; Cottrell, P.E.
Author_Institution :
IBM System Products Division, Essex Junction, Vermont
Abstract :
A numerical two dimmensional simulation has been used to demonstrate the effect of IGFET channel width on threshold voltage. The computed results agree well with experiments and are used to build an understanding of the mechanism. Potential, field and carrier concentration distributions are used to provide a picture of the geometric interactions.
Keywords :
Counting circuits; Electrical resistance measurement; Electrons; FETs; Finite element methods; Insulation; Intrusion detection; Large scale integration; Substrates; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1976 International
DOI :
10.1109/IEDM.1976.189112
