Title :
A solid-state DC-DC converter using n-channel MOSFETs
Author :
Iñigo, R.M. ; Shafik, T. ; Park, C.W.
Author_Institution :
Virginia Univ. Rehabilitation Eng. Center, Charlottesville, VA, USA
Abstract :
The authors describe the design, construction, and testing of an all n-channel PWM (pulsewidth modulation) DC-DC converter for electric wheelchair (EW) applications. The circuit requires only three ICs and four power MOSFETs, plus a few passive components. Its efficiency is much higher than that of a previously reported device that used n- and p-channel MOSFETs. The converter is compact, lightweight, and very reliable, owing to the use of ICs and a very low component count
Keywords :
insulated gate field effect transistors; power convertors; power transistors; pulse width modulation; PWM; electric wheelchair; n-channel; p-channel; passive components; power MOSFET; pulsewidth modulation; solid-state DC-DC converter; Batteries; DC-DC power converters; MOSFETs; Pulse width modulation; Pulse width modulation converters; Solid state circuits; Space vector pulse width modulation; Switches; Voltage; Wheelchairs;
Conference_Titel :
Southeastcon '91., IEEE Proceedings of
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-0033-5
DOI :
10.1109/SECON.1991.147910
