• DocumentCode
    3554342
  • Title

    Tapered windows in phosphorus-doped SiO2by ion implantation

  • Author

    North, J.C. ; McGahan, T.E. ; Rice, D.W. ; Adams, A.C.

  • Author_Institution
    Bell Laboratories, Murray Hill, New Jersey
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    8
  • Lastpage
    11
  • Abstract
    It has been shown that tapered windows can be made in both Nitrox deposited ∼ 1% phosphorus-doped SiO2(P-glass) and Silox deposited ∼7% P-glass as well as undoped SiO2by an ion implantation which produces a thin damaged layer at the top of the oxide. The damaged layer etches at a faster rate than the undamaged oxide. This fast-etching layer undercuts the photoresist which serves as the etching mask and results in window walls having slopes in the range of 30-40° with respect to the wafer surface.
  • Keywords
    Coatings; Dielectric devices; Etching; Hafnium; Ion implantation; Metallization; Resists; Silicon compounds; Silicon devices; Thermal factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189143
  • Filename
    1479223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554342