Title :
Tapered windows in phosphorus-doped SiO2by ion implantation
Author :
North, J.C. ; McGahan, T.E. ; Rice, D.W. ; Adams, A.C.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
Abstract :
It has been shown that tapered windows can be made in both Nitrox deposited ∼ 1% phosphorus-doped SiO2(P-glass) and Silox deposited ∼7% P-glass as well as undoped SiO2by an ion implantation which produces a thin damaged layer at the top of the oxide. The damaged layer etches at a faster rate than the undamaged oxide. This fast-etching layer undercuts the photoresist which serves as the etching mask and results in window walls having slopes in the range of 30-40° with respect to the wafer surface.
Keywords :
Coatings; Dielectric devices; Etching; Hafnium; Ion implantation; Metallization; Resists; Silicon compounds; Silicon devices; Thermal factors;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189143
