• DocumentCode
    3554348
  • Title

    Large-area, high-voltage thyristors for HVDC converter

  • Author

    Morita, K. ; Yatsuo, T. ; Okamura, M. ; Kojima, I.

  • Author_Institution
    Hitachi, Ltd., Ibaraki, Japan
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    26
  • Lastpage
    29
  • Abstract
    Large-area, high-voltage thyristors with the ratings of 1500A, 4000V for converters of high-voltage direct current transmission systems have been developed. By improvement in the aluminum diffusion technique, high accuracy of diffusion and long carrier lifetime were attained. To increase the effective conducting area up to eighty percent of the wafer area, the sigma shaped edge contouring technique has been used. A gamma-ray irradiation was used for precise control of the reverse recovery charge. By using a computer aided design which considered the impurity profile, the dynamic characteristics of the device were calculated and the structure was designed.
  • Keywords
    Aluminum; Charge carrier lifetime; Diffusion processes; Electric variables; Fabrication; HVDC transmission; Impurities; Silicon; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189149
  • Filename
    1479229