DocumentCode
3554348
Title
Large-area, high-voltage thyristors for HVDC converter
Author
Morita, K. ; Yatsuo, T. ; Okamura, M. ; Kojima, I.
Author_Institution
Hitachi, Ltd., Ibaraki, Japan
Volume
23
fYear
1977
fDate
1977
Firstpage
26
Lastpage
29
Abstract
Large-area, high-voltage thyristors with the ratings of 1500A, 4000V for converters of high-voltage direct current transmission systems have been developed. By improvement in the aluminum diffusion technique, high accuracy of diffusion and long carrier lifetime were attained. To increase the effective conducting area up to eighty percent of the wafer area, the sigma shaped edge contouring technique has been used. A gamma-ray irradiation was used for precise control of the reverse recovery charge. By using a computer aided design which considered the impurity profile, the dynamic characteristics of the device were calculated and the structure was designed.
Keywords
Aluminum; Charge carrier lifetime; Diffusion processes; Electric variables; Fabrication; HVDC transmission; Impurities; Silicon; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189149
Filename
1479229
Link To Document