DocumentCode
3554352
Title
High speed high voltage static induction thyristor
Author
Kajiwara, Y. ; Watakabe, Y. ; Bessho, M. ; Yukimoto, Y. ; Shirahata, K.
Author_Institution
Mitsubishi Electric Corporation, Itami, JAPAN
Volume
23
fYear
1977
fDate
1977
Firstpage
38
Lastpage
41
Abstract
We have developed a new thyristor called Static Induction Thyristor (SI Thyristor) which showed a short fall time of current (0.1 µsec) and a high forward blocking voltage (700 V). The SI thyristor has a combined structure of an N channel Static Induction Transistor and a PNP transistor. It has both capabilities of gate turn-on and gate turn-off according to the value of gate biasing voltage. We have investigated the turn-off mechanism for the high voltage device and have clarified the relation between the device parameters and carrier decaying time responsible for current fall time. From these investigation, we have improved the switching characteristics of high voltage device.
Keywords
Anodes; Cathodes; Control systems; Design optimization; Laboratories; P-i-n diodes; Solid state circuits; Temperature; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189152
Filename
1479232
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