Determination of optimum parameters and characterization of MIS solar cells

The authors present a rigorous and complete analysis of the working of MIS (metal- insulator-semiconductor) solar cells, the advantages of which are now well known. We take into account tunnelling of electrons and holes across the thin insulating layer and the influence of interface states. The efficiency of the device is calculated as a function of the insulating layer thickness δ, the optimum value of which is determined. The interface states are supposed interacting with free carriers of the three reservoirs i.e. metal, semiconductor conduction and valence band. The presented work allows us, for the first time to our knowledge, not only to characterize in detail MIS solar cells but also to foresee the fabrication of optimum devices.