• DocumentCode
    3554380
  • Title

    Silicon on sapphire magnetodiodes of high sensitiveness

  • Author

    Kamarinos, Geohges ; Viktorovitch, P. ; Cristoloveanu, Sarin ; Borel, Jodeph ; Staderini, R.

  • Author_Institution
    ENSERG, GRENOBLE, CEDEX FRANCE
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    114
  • Lastpage
    114
  • Abstract
    The values of recombination parameters (bulk lifetime and surface recombination velocities) of films of Silicon On Sapphire allow the realization of magnetodiodes, which are both very sensitive and compatible with the VLSI Technology. The S. O. S. magnetodiodes we present exhibit an average sensitiveness on the order of some 150 mA/Tesla (10 times the sensitiveness of Hall effect). Besides very low magnetic fields (B = 10-8T = 10γ) are easily detectable.
  • Keywords
    Current-voltage characteristics; Diodes; Hall effect; Magnetic analysis; Magnetic devices; Magnetic fields; Semiconductor films; Silicon; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189178
  • Filename
    1479258
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554380