• DocumentCode
    3554401
  • Title

    A high-voltage analog-compatible I2L process

  • Author

    Allstot, D.J. ; Wei, T.S.-T. ; Lui, S.K. ; Gray, P.R. ; Meyer, R.G.

  • Author_Institution
    University of California, Berkeley, California
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    175
  • Lastpage
    177
  • Abstract
    A new I2L process has been developed for application in high-performance analog/digital LSI circuits. High-speed I2L circuitry is realized on the same chip with high-voltage analog bipolar transistors by the addition of a single non-critical masking step, and a phosphorous implant, to a standard 40 volt bipolar process. An experimental test circuit has been designed which shows I2L betas of greater than eight per collector with a minimum average propagation delay of about 40 nS using a 14 micron thick 5 ohm-cm epitaxial layer.
  • Keywords
    Analog computers; Application software; Bipolar transistors; Circuit testing; Doping; Epitaxial layers; Implants; Laboratories; Large scale integration; Propagation delay;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189197
  • Filename
    1479277
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554401