DocumentCode
3554408
Title
Planar GaAs p-n junctions by Be ion implantation
Author
Helix, M.J. ; Vaidyanathan, K.V. ; Streetman, B.G. ; Chatterjee, Pallab K.
Author_Institution
University of Illinois, Urbana, Illinois
Volume
23
fYear
1977
fDate
1977
Firstpage
195
Lastpage
197
Abstract
The fabrication of planar p-n junctions in GaAs by Be ion implantation is described and the properties of these junctions are compared with Zn-implanted and Zn-diffused diodes. The Be-implanted diodes exhibit good forward characteristics, very low reverse leakage current, and high breakdown voltage. It appears that lateral diffusion is negligible in this fabrication method, suggesting that such junctions may be used in GaAs integrated circuit applications.
Keywords
Annealing; Fabrication; Gallium arsenide; Ion implantation; Leakage current; Light emitting diodes; P-n junctions; Plasma temperature; Resists; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189203
Filename
1479283
Link To Document