• DocumentCode
    3554413
  • Title

    The thin film polycrystalline solar cell program in the U.S.A.

  • Author

    Feucht, D.L.

  • Author_Institution
    U.S. Energy Research and Development Administration, Washington, D.C.
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    213
  • Lastpage
    213
  • Abstract
    The objective of the thin film polycrystalline solar cell work in the U.S.A. is to develop thin film materials which have potential for achieving thin film array efficiencies of greater than 10% at a price of $100-300/kWe. A variety of thin film materials and technologies are presently being researched to determine their potential for solar cell conversion and low cost fabrication. The materials being investigated include CdS, GaAs, Si, amorphous Si, InP, CdTe, Zn3P2, ZnSiAs, and Cu2O. Homojunction, heterojunction, Schottky barrier and conductive oxides are being studied as collection barriers for efficient solar cell conversion. The variety of solar cell research areas will be reviewed describing the technologies being pursued, the results obtained, and the important problems or issues to be resolved.
  • Keywords
    Amorphous materials; Conducting materials; Costs; Fabrication; Gallium arsenide; Heterojunctions; Indium phosphide; Photovoltaic cells; Transistors; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189208
  • Filename
    1479288
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554413