DocumentCode :
3554413
Title :
The thin film polycrystalline solar cell program in the U.S.A.
Author :
Feucht, D.L.
Author_Institution :
U.S. Energy Research and Development Administration, Washington, D.C.
Volume :
23
fYear :
1977
fDate :
1977
Firstpage :
213
Lastpage :
213
Abstract :
The objective of the thin film polycrystalline solar cell work in the U.S.A. is to develop thin film materials which have potential for achieving thin film array efficiencies of greater than 10% at a price of $100-300/kWe. A variety of thin film materials and technologies are presently being researched to determine their potential for solar cell conversion and low cost fabrication. The materials being investigated include CdS, GaAs, Si, amorphous Si, InP, CdTe, Zn3P2, ZnSiAs, and Cu2O. Homojunction, heterojunction, Schottky barrier and conductive oxides are being studied as collection barriers for efficient solar cell conversion. The variety of solar cell research areas will be reviewed describing the technologies being pursued, the results obtained, and the important problems or issues to be resolved.
Keywords :
Amorphous materials; Conducting materials; Costs; Fabrication; Gallium arsenide; Heterojunctions; Indium phosphide; Photovoltaic cells; Transistors; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1977 International
Type :
conf
DOI :
10.1109/IEDM.1977.189208
Filename :
1479288
Link To Document :
بازگشت