A one-device memory cell using a single layer of polysilicon and a self-registering metal-to-polysilicon contact

Author

Rideout, V.L. ; Walker, John J. ; Cramer, Alice

Author_Institution

IBM T. J. Watson Research Center, Yorktown Hts., N. Y.

Volume

fYear

1977

fDate

1977

Firstpage

258

Lastpage

261

Keywords

Boron; Capacitors; Chemicals; Etching; Fabrication; Insulation; Oxidation; Positron emission tomography; Silicon compounds; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1977 International

Type

DOI

10.1109/IEDM.1977.189224

Filename

1479304

Link To Document