Title :
A one-device memory cell using a single layer of polysilicon and a self-registering metal-to-polysilicon contact
Author :
Rideout, V.L. ; Walker, John J. ; Cramer, Alice
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Hts., N. Y.
Keywords :
Boron; Capacitors; Chemicals; Etching; Fabrication; Insulation; Oxidation; Positron emission tomography; Silicon compounds; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189224
