High performance output Schottky I2L/MTL

The design and characterization of a second generation I²L/MTL gate with five decoupled collectors, each collector incorporating a PtSi Schottky diode, is presented. A deep buried-collector implant is used to minimize base current losses and increase the effective up gain. An increase in A.C. performance by 40 to 70% over the second generation gate with N⁺collectors is obtained which depends on the effective Schottky barrier height or logic swing in the region of extrinsic delay. For an effective Schottky barrier height of 0.65 eV, the gate is fully functional over the military temperature range of -55 to 125°C where β^effu≥ 4 and τ^-d = 10 ns at 100 µA injector current. At 25°C the speed power product is constant for low injector currents at 0.16 pJ and increases to 0.7 pJ at 100 µA injector current.