• DocumentCode
    3554445
  • Title

    Numerical analysis of gate triggered SCR turn-on transients

  • Author

    Anheier, Walter ; Engl, Walter L. ; Sittig, Roland

  • Author_Institution
    Institut für Theoretische Elektrotechnik, Aachen, Germany
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    303
  • Lastpage
    303
  • Abstract
    A one dimensional transient analysis for the distribution of carriers and potential within a power thyristor was carried out. The simulation is based on geometrical, technological and physical data obtained from an actual device structure. The 11-A thyristor CS 106 has an area of .02 cm2and a thickness of 265 microns. The simulation includes all known physical mechanisms which are important for power devices, e.g. SRH- and Auger recombination avalanche multiplication, and mobility saturation effects. The results of this numerical approach show different internal mechanisms, which are identified with the different time delays of the turn-on wave forms.
  • Keywords
    Anodes; Cathodes; Delay effects; Electrons; Numerical analysis; Solid modeling; Spontaneous emission; Thyristors; Transient analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189238
  • Filename
    1479318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554445