DocumentCode
3554453
Title
Power GaAs FETs
Author
Wisseman, William R.
Author_Institution
Texas Instruments Incoporated, Dallas, Texas
Volume
23
fYear
1977
fDate
1977
Firstpage
326
Lastpage
329
Abstract
This paper reviews progress in the development of GaAs FETs for microwave power applications. At Texas Instruments over 5W cw output power has been achieved from a single device at 9 GHz and over 1W at 16 GHz. (1-3) Fujitsu (4) and Bell Laboratories (5) have obtained 10W at 4 GHz. Power added efficiencies of over 30% were achieved at these power levels. Power FET structures that are being developed at Texas Instruments and other laboratories are described and compared. The most recently reported microwave performance results are given, and the possibilities for achieving higher power levels considered.
Keywords
Copper; FETs; Fingers; Gallium arsenide; Heat sinks; Instruments; Laboratories; Lithography; Metallization; Microwave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189245
Filename
1479325
Link To Document