• DocumentCode
    3554456
  • Title

    Silicon carbide field-effect and bipolar transistors

  • Author

    Muench, W.V. ; Hoeck, P. ; Pettenpaul, E.

  • Author_Institution
    Technische Universitaet Hannover, Hannover, Germany
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    337
  • Lastpage
    339
  • Abstract
    Schottky-barrier field-effect transistors and bipolar npn transistors have been produced from silicon carbide. P-n junctions were grown by LPE and VPE processes; the definition of p-n junction areas was accomplished by selective gaseous etching. A transconductance of 0.7 mA/V and β-values in the range of 4 to 8 were obtained for the FET and the bipolar devices, respectively.
  • Keywords
    Bipolar transistors; Etching; FETs; Gold; Light emitting diodes; Nitrogen; P-n junctions; Silicon carbide; Temperature; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189248
  • Filename
    1479328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554456