Silicon carbide field-effect and bipolar transistors

Schottky-barrier field-effect transistors and bipolar npn transistors have been produced from silicon carbide. P-n junctions were grown by LPE and VPE processes; the definition of p-n junction areas was accomplished by selective gaseous etching. A transconductance of 0.7 mA/V and β-values in the range of 4 to 8 were obtained for the FET and the bipolar devices, respectively.