• DocumentCode
    3554472
  • Title

    GaxIn1-xSb for high speed transferred electron devices

  • Author

    Kawashima, M. ; Ohta, K. ; Kataoka, S.

  • Author_Institution
    Electrotechnical Laboratory, Tokyo, Japan
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    372
  • Lastpage
    374
  • Abstract
    Foundamental properties of the transferred electron effect of LPE grown GaxIn1-xSb have been measured. Low threshold field, 400-600 V/cm, (0.4 ≤ x ≤ 0.8), low constant domain velocity, 5 × 106cm/sec, (0.55 ≤ x ≤ 0.8 ), and low impact ionization rate in the domain makes this material promising for high speed logic devices. Smaller power-delay poduct, about 1/50 of that of GaAs Gunn logic (20fJ) is expected, using an optimum Ga composition x=0.8.
  • Keywords
    Diodes; Electrons; Gallium arsenide; Gunn devices; Impact ionization; Logic devices; Microwave devices; Microwave oscillators; Performance evaluation; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189262
  • Filename
    1479342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554472