GaxIn1-xSb for high speed transferred electron devices

Foundamental properties of the transferred electron effect of LPE grown GaxIn1-xSb have been measured. Low threshold field, 400-600 V/cm, (0.4 ≤ x ≤ 0.8), low constant domain velocity, 5 × 10⁶cm/sec, (0.55 ≤ x ≤ 0.8 ), and low impact ionization rate in the domain makes this material promising for high speed logic devices. Smaller power-delay poduct, about 1/50 of that of GaAs Gunn logic (20fJ) is expected, using an optimum Ga composition x=0.8.