Title :
MM-Wave pin switching diode fabrication using silicon molecular beam epitaxy
Author :
Ota, Y. ; Buchanan, W.L. ; Peterson, O.G.
Author_Institution :
Bell Telephone Laboratories, Reading, Pa.
Abstract :
A Molecular Beam Epitaxial (MBE) system was used to grow both lightly doped n and p silicon epitaxy on heavily doped n+substrates. An epitaxial grown p-n junction was formed in the latter material. The high quality of the epitaxy and its practical application was demonstrated by the successful fabrication of millimeter-wave switching diodes.
Keywords :
Conductivity; Diodes; Doping; Epitaxial growth; Epitaxial layers; Fabrication; Molecular beam epitaxial growth; Silicon; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189263
