A new buried oxide isolation for high-speed, high-density MOS integrated circuits

The new buried-oxide (BO) MOS concept is developed. The BO-MOS has an extensive oxide-isolated structure which isolates not only the sidewall but also bottom of the source and drain diffusions similar to SOS-MOS, and yet it retains high carrier mobility and low-leakage junction properties. Thus it posesses important advantages in speed, density and cost. The results of this work are presented for 1024 bit n-MOS static RAM and 8 bit CMOS static shift resister togather with data of the identical bulk n-NOS and SOS-CMOS circuits respectively.