DIMOS - A novel IC technology with submicron effective channel MOSFETs

A DIMOS transistor is physically similar to the diffusion self-aligned (or double diffused) transistor, but it has a shorter submicron effective channel. This very short channel is realized by subsequent ion implantations using a ramp-shaped or stepped polysilicon gate electrode as an implantation mask for the source and channel doping. Ramp gate and stepped gate DIMOS transistors have been fabricated. ICs with ramp gate DIMOS transistors have been studied in more detail. Ring oscillators show a propagation delay of 230 ps per stage. The fabrication process is a slightly modified polysilicon gate process usingstandard photolithography.