Title :
Intrachip and spatial parametric integrity an important part of IC process characterization
Author_Institution :
RCA Laboratories, Princeton, NJ
Abstract :
This work demonstrates the power and use of closely spaced nominally identical test devices as I.C. Process characterization tools.
Keywords :
Circuit testing; Contact resistance; Integrated circuit testing; Interpolation; MOS capacitors; NIST; Sampling methods; Silicon; Vehicles; Voltage;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189272
