• DocumentCode
    3554485
  • Title

    V-Groove power field effect transistors

  • Author

    Salama, C.A.T.

  • Author_Institution
    University of Toronto, Toronto, Ontario, Canada
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    412
  • Lastpage
    415
  • Abstract
    This paper reviews briefly the criteria involved in the design of power field effect transistors. Particular emphasis is placed on recently proposed structures using anisotropically etched V-groove which may, in the near future, present a serious challenge to bipolar power transistors.
  • Keywords
    Anisotropic magnetoresistance; Bipolar transistors; Breakdown voltage; Circuits; Etching; FETs; Frequency; Gallium arsenide; MOSFETs; Power transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189274
  • Filename
    1479354
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554485