Measurement of metal migration on thick-film piezoresistors and their terminations

Author

Song, C. ; Kerns, D.V., Jr. ; Davidson, J.L. ; Kinser, D.L.

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

fYear

1991

fDate

7-10 Apr 1991

Firstpage

1110

Abstract

Metal migration from the thick-film termination can affect not only the electrical characteristics but also the gauge factor or piezoresistive coefficient of thick-film sensors. Four sets of sensors with different ratios were designed to test the influence of the terminal metal migration effects on the gauge factors and resistivity of thick-film resistors. In all the cases, the shortest resistors have a lower gauge factor and a large deviation of resistances. The longer resistors will have better electrical parameters. SEM (scanning electron microscope) studies showed this interaction at the interface between the terminal and the resistor. The same distance of terminal diffusion is larger for a short resistor than for a longer one

Keywords

diffusion in solids; electromigration; piezoresistance; strain gauges; thick film resistors; SEM; electrical characteristics; gauge factor; metal migration; piezoresistive coefficient; terminal diffusion; terminations; thick-film piezoresistors; thick-film sensors; Conductivity; Electric variables; Piezoresistance; Piezoresistive devices; Resistors; Scanning electron microscopy; Sensor phenomena and characterization; Testing; Thick film sensors; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '91., IEEE Proceedings of

Conference_Location

Williamsburg, VA

Print_ISBN

0-7803-0033-5

Type

conf

DOI

10.1109/SECON.1991.147936

Filename

147936