DocumentCode
3554501
Title
Bias-assisted photoemission in the 1-2 micron range
Author
Escher, J.S. ; Gregory, P.E. ; Hyder, S.B. ; Houng, Y.M. ; Antypas, G.A.
Author_Institution
Varian Associates, Inc., Palo Alto, CA
Volume
23
fYear
1977
fDate
1977
Firstpage
460
Lastpage
464
Abstract
Experimental photoemission data are presented on a new type of bias-assisted photocathode employing the transferred-electron effect. The cathodes are heterostructures employing lattice-matched InP-InGaAsP alloys. Reflection mode yields up to 1.0% out to 1.7-micron threshold have been achieved in an ultra-high vacuum experimental photoemission system.
Keywords
Cathodes; Electrons; Elementary particle vacuum; Indium phosphide; Laboratories; Photoelectricity; Photonic band gap; Surface treatment; Tellurium; Vacuum systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189289
Filename
1479369
Link To Document