• DocumentCode
    3554510
  • Title

    Isolation of junction devices in GaP using electron bombardment

  • Author

    Wada, Takao ; Uemura, Sashiro

  • Author_Institution
    Mie University, Mie, Japan
  • Volume
    23
  • fYear
    1977
  • fDate
    1977
  • Firstpage
    486
  • Lastpage
    489
  • Abstract
    High energy electron bombardment produces high resistivity layers in n- and p-type GaP and varies from an original orange colour of the crystal to black colour. This new technique is useful for electrically and optically isolating GaP junction diodes. A test pattern of an XY matrix of LED arrays (∼100µm square) was fabricated by scanning the beam spot (∼5µmφ) at 1 and 2 MeV by ultra-high voltage electron microscope. After bombardment, the resistance between the separated diodes increased to over 107Ω.
  • Keywords
    Conductivity; Electron beams; Electron optics; Epitaxial growth; Epitaxial layers; Gallium arsenide; Light emitting diodes; Optical films; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1977 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1977.189297
  • Filename
    1479377
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554510