Title :
Modeling, fabrication and performance of ion implanted low-noise GaAs FETs
Author :
Higgins, J.A. ; Kuvas, R.L. ; Ch´en, D.R.
Author_Institution :
Rockwell International, Thousand Oaks, California
Keywords :
Annealing; Circuit testing; Doping profiles; Fabrication; Frequency; Gallium arsenide; Ion implantation; Microwave FETs; Noise figure; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189303
