Title :
Geometry effects of small MOSFET devices
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Hts., N. Y.
Keywords :
Charge carriers; Circuit synthesis; Doping; Electrons; Geometry; MOSFET circuits; Numerical simulation; Space charge; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1977 International
DOI :
10.1109/IEDM.1977.189305
