DocumentCode

3554519

Title

Geometry effects of small MOSFET devices

Author

Gaensslen, F.H.

Author_Institution

IBM Thomas J. Watson Research Center, Yorktown Hts., N. Y.

Volume

23

fYear

1977

fDate

1977

Firstpage

512

Lastpage

515

Keywords

Charge carriers; Circuit synthesis; Doping; Electrons; Geometry; MOSFET circuits; Numerical simulation; Space charge; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1977 International

Type

conf

DOI

10.1109/IEDM.1977.189305

Filename

1479385