DocumentCode
3554521
Title
Low temperature threshold behavior of depletion mode devices - Characterization and simulation
Author
Gaensslen, F.H. ; Jaeger, R.C. ; Walker, J.J.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Hts., N.Y.
fYear
1977
fDate
5-7 Dec. 1977
Firstpage
520
Lastpage
524
Keywords
Dielectric substrates; Implants; Impurities; MOS devices; MOSFET circuits; Nitrogen; Poisson equations; Temperature dependence; Temperature sensors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/IEDM.1977.189307
Filename
1479387
Link To Document