DocumentCode :
3554521
Title :
Low temperature threshold behavior of depletion mode devices - Characterization and simulation
Author :
Gaensslen, F.H. ; Jaeger, R.C. ; Walker, J.J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Hts., N.Y.
fYear :
1977
fDate :
5-7 Dec. 1977
Firstpage :
520
Lastpage :
524
Keywords :
Dielectric substrates; Implants; Impurities; MOS devices; MOSFET circuits; Nitrogen; Poisson equations; Temperature dependence; Temperature sensors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1977 International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1977.189307
Filename :
1479387
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3554521
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