DocumentCode
3554522
Title
Weak accumulation operation of the N-channel deep-depletion SOS/MOSFET
Author
Jerdonek, Ronald T. ; Bandy, William R. ; Lin, H.C.
Author_Institution
Dept. of Defense, Ft. Meade, MD
Volume
23
fYear
1977
fDate
1977
Firstpage
525
Lastpage
528
Abstract
The purpose of this paper is to determine the dependence of electron mobility increase upon gate potential for the n-channel deep-depletion SOS/MOSFET operating in weak accumulation. This is accomplished by analyzing the unique depth dependence of the carrier mobility in thin SOS films and by characterizing the thickness of the accumulation layer as a function of gate potential. The thickness calculation is simplified with the aid of a closed form approximation for the transcendental relationship between gate and surface potentials. Comparison to device conductance data shows that our theoretical model is accurate.
Keywords
Charge measurement; Current measurement; Data analysis; Educational institutions; Electron mobility; Equations; Fabrication; MOSFET circuits; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1977 International
Type
conf
DOI
10.1109/IEDM.1977.189308
Filename
1479388
Link To Document