PbS-Si anisotype heterojunction characteristics

The operation of p-n PbS-Si heterojunction devices at 200 K and 300 K is reported. The I-V and C-V characteristics are presented and compared to those of p-p heterojunctions. At 200 K and a wavelength of 2.7 µm, the open circuit detectivity and voltage responsivity achieved are D^*λ(100 Hz, 1 Hz) = 4 × 10⁹cm Hz^1/2/W and RV, λ(100 Hz) = 4 × 10³V/W. Under the same conditions but in short circuit, zero bias operation, the detector performance achieved is, D^*λ(100 Hz, 1 Hz = 3.4 × 10⁹cm Hz^1/2/W and RI, λ, = 4.8 × 10^-4A/W.