Low-threshold room-temperature Ga(1-x)AlxAs/GaAs lasers grown by metalorganic chemical vapor deposition

Low-threshold room-temperature Ga(1-x)AlxAs/ GaAs double heterostructure lasers have been grown by the metalorganic chemical vapor deposition process. Studies have been made of the dependence of Jth upon the active layer thickness, d, and the mole fraction of Al, x, in the confinement layers. Values of Jth as low as 630A/cm²have been achieved for d ∼ 540Å and x ∼ 0.5.