Title :
Infrared multiphoton-excited luminescence in porous silicon
Author :
Chin, R.P. ; Doseok Kim ; Petrova-Koch, V. ; Shen, Y.R.
Author_Institution :
Dept. of Phys., California Univ., Berkeley, CA, USA
Abstract :
Summary form only given. We have studied luminescence from porous Si induced by infrared multiphoton excitation (MPE) using a picosecond tunable infrared source. The n-photon carrier excitation process was found to be direct at small n, but indirect through the stretch vibrational resonances of the SiH/sub x/ surface species in porous Si with n=7 or 8.
Keywords :
elemental semiconductors; multiphoton spectra; photoluminescence; porous materials; silicon; Si; SiH/sub x/ surface species; carrier excitation; infrared multiphoton-excited luminescence; picosecond tunable source; porous silicon; stretch vibrational resonance; Azimuthal angle; Infrared detectors; Laser excitation; Luminescence; Optical fibers; Optical wavelength conversion; Resonance; Silicon; Solids; Tunable circuits and devices;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
