Title :
Geometry effects in VMOS transistors
Author :
Bhatti, I.S. ; Yau, R.Y.
Author_Institution :
American Microsystems, Inc., Santa Clara, Ca.
Abstract :
Changes in the threshold and channel mobility of VMOS transistors due to device size have been reported. It is also shown that any VMOS transistor can be modeled as a combination of a minimum size device and a typical section of a large device. The influence of the geometry effects on weak inversion characteristics has been described.
Keywords :
Boron; Condition monitoring; Fabrication; Geometry; Intrusion detection; Length measurement; MOS devices; Process control; Resistors; Size measurement;
Conference_Titel :
Electron Devices Meeting, 1978 International
DOI :
10.1109/IEDM.1978.189344
