DocumentCode
3554593
Title
Geometry effects in VMOS transistors
Author
Bhatti, I.S. ; Yau, R.Y.
Author_Institution
American Microsystems, Inc., Santa Clara, Ca.
Volume
24
fYear
1978
fDate
1978
Firstpage
30
Lastpage
33
Abstract
Changes in the threshold and channel mobility of VMOS transistors due to device size have been reported. It is also shown that any VMOS transistor can be modeled as a combination of a minimum size device and a typical section of a large device. The influence of the geometry effects on weak inversion characteristics has been described.
Keywords
Boron; Condition monitoring; Fabrication; Geometry; Intrusion detection; Length measurement; MOS devices; Process control; Resistors; Size measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1978 International
Type
conf
DOI
10.1109/IEDM.1978.189344
Filename
1479769
Link To Document