• DocumentCode
    3554597
  • Title

    Two-dimensional calculation of avalanche breakdown voltage in deeply-depleted MOS capacitors

  • Author

    Rusu, A. ; Bulucea, C.

  • Author_Institution
    R & D Institute for Electronic Components, ICCE, Bucharest, Romania
  • Volume
    24
  • fYear
    1978
  • fDate
    1978
  • Firstpage
    42
  • Lastpage
    45
  • Abstract
    Two-dimensional computer calculations of the deep-depletion avalanche breakdown voltage are presented for Si-SiO2MOS capacitors covering the range of substrate doping between 1014and 1018cm-3and oxide thickness between 0.01 and 5.00 µm. The results are applied to explain and quantitatively characterize the breakdown voltage collapse experimentally observed in the high-voltage range of the breakdown voltage characteristic of 0.3 and 1.0 µm-oxide gate-controlled diodes.
  • Keywords
    Avalanche breakdown; Breakdown voltage; Diodes; Impurities; Integral equations; Ionization; MOS capacitors; Poisson equations; Silicon; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1978 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1978.189347
  • Filename
    1479772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554597