Two-dimensional calculation of avalanche breakdown voltage in deeply-depleted MOS capacitors

Two-dimensional computer calculations of the deep-depletion avalanche breakdown voltage are presented for Si-SiO2MOS capacitors covering the range of substrate doping between 10¹⁴and 10¹⁸cm^-3and oxide thickness between 0.01 and 5.00 µm. The results are applied to explain and quantitatively characterize the breakdown voltage collapse experimentally observed in the high-voltage range of the breakdown voltage characteristic of 0.3 and 1.0 µm-oxide gate-controlled diodes.