DocumentCode :
3554618
Title :
Be implanted InGaAsP avalanche photodiode
Author :
Law, H.D. ; Tomasetta, L.R. ; Nakano, K.
Author_Institution :
Rockwell International Science Center, Thousand Oaks, California
Volume :
24
fYear :
1978
fDate :
1978
Firstpage :
116
Lastpage :
119
Abstract :
High quantum efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10-6A/cm2at 10 V. The devices have 65% external quantum efficiency at 1.06µm without an anti-reflection coating and a uniform avalanche gain of 12.
Keywords :
Annealing; Avalanche photodiodes; Epitaxial growth; Etching; Gallium arsenide; Indium phosphide; Optical fiber communication; Photodetectors; Semiconductor diodes; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1978 International
Type :
conf
DOI :
10.1109/IEDM.1978.189366
Filename :
1479791
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3554618
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