• DocumentCode
    3554618
  • Title

    Be implanted InGaAsP avalanche photodiode

  • Author

    Law, H.D. ; Tomasetta, L.R. ; Nakano, K.

  • Author_Institution
    Rockwell International Science Center, Thousand Oaks, California
  • Volume
    24
  • fYear
    1978
  • fDate
    1978
  • Firstpage
    116
  • Lastpage
    119
  • Abstract
    High quantum efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10-6A/cm2at 10 V. The devices have 65% external quantum efficiency at 1.06µm without an anti-reflection coating and a uniform avalanche gain of 12.
  • Keywords
    Annealing; Avalanche photodiodes; Epitaxial growth; Etching; Gallium arsenide; Indium phosphide; Optical fiber communication; Photodetectors; Semiconductor diodes; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1978 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1978.189366
  • Filename
    1479791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554618